Furukawa expands research and development activity for crystal materials.

The firm launches monthly 2,000 units of gallium nitride (GaN) substrate by end of March 2010 when the demand increases for blue violet laser diode of next generation laser disc and light emitting diode of lighting.

The firm also develops scintilator crystal by developing of lutetium – aluminium – garnet (LuAG) crystal and mammography with the crystal.

The firm makes 2 inches GaN substrate at Oyama plant in Tochigi shipping sample for research institutes.

The product is still middle of the development but the firm is confident for the quality.

Demand for GaN semiconductor is expected to grow for next generation laser disc, backlight of liquid crystal and LED.